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2SC5198

manufacturer:
Toshiba
Description:
Silicon NPN Triple Diffused Type Power Amplifier Applications
Category:
Semiconductors
Specifications
Transistor Polarity:
NPN
Product Category:
Bipolar Transistor - Bipolar Junction Transistor (BJT)
Installation Style:
Through Hole
Pd-power Dissipation:
100 W
Factory Packaging Quantity:
2000
Package:
Cut Tape
Collector Continuous Current:
10 A
Gain Bandwidth Product FT:
30 MHz
Configuration:
Triple
Product Type:
BJTs - Bipolar Transistors
Emitter - Base Voltage VEBO:
5 V
Collector-emitter Maximum Voltage VCEO:
140 V
DC Collector / Base Gain Hfe Min:
55
Manufacturer:
Toshiba
Introduction
The 2SC5198,from Toshiba,is semiconductors-Integrated Circuits - ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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