FF300R12KS4
manufacturer:
Infineon Technologies
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
400 NA
Product Category:
IGBT Modules
Minimum Operating Temperature:
- 40 C
Length:
106.4 Mm
Continuous Collector Current At 25 C:
370 A
Installation Style:
Chassis Mount
Collector- Emitter Voltage VCEO Max:
1200 V
Package / Case:
62 Mm
Factory Packaging Quantity:
10
Maximum Operating Temperature:
+ 125 C
Height:
30.9 Mm
Package:
Tray
Technology:
Si
Pd-power Dissipation:
1950 W
Configuration:
Dual
Width:
61.4 Mm
Gate/emitter Maximum Voltage:
20 V
Trademark:
Infineon Technologies
Collector-Emitter Saturation Voltage:
3.75 V
Product:
IGBT Silicon Modules
Manufacturer:
Infineon Technologies
Introduction
The FF300R12KS4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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