MMBT5550LT1G
manufacturer:
ONSEMI
Category:
Semiconductors
Specifications
Transistor Polarity:
NPN
Product Category:
Bipolar Transistors - BJT
Mounting Style:
SMD/SMT
Maximum DC Collector Current:
600 MA
Collector- Emitter Voltage VCEO Max:
140 V
Package / Case:
SOT-23-3
Maximum Operating Temperature:
+ 150 C
Configuration:
Single
Collector- Base Voltage VCBO:
180 V
Series:
MMBT5550L
Emitter- Base Voltage VEBO:
6 V
Collector-Emitter Saturation Voltage:
0.15 V
Manufacturer:
Onsemi
Introduction
The MMBT5550LT1G,from onsemi,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
BC817-25LT1G |
|
|
|
|
2SA1417S-TD-E |
|
|
|
|
NJVMJD31CT4G |
|
|
|
|
CPH3145-TL-E |
|
|
|
|
NJW0281G |
|
|
|
|
D45H8G |
|
|
|
|
2SD1815S-TL-E |
|
|
|
|
2SC5569-TD-E |
|
|
|
|
2SA1708S-AN |
|
|
|
|
MJD31CT4G |
|
|
|
|
2SA2125-TD-E |
|
|
|
|
MJD45H11T4G |
|
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