2DB1182Q-13
manufacturer:
Diodes Incorporated
Category:
Semiconductors
Specifications
Transistor Polarity:
PNP
Product Category:
Bipolar Transistors - BJT
Mounting Style:
SMD/SMT
Maximum DC Collector Current:
- 3 A
Collector- Emitter Voltage VCEO Max:
- 32 V
Package / Case:
TO-252-3
Maximum Operating Temperature:
+ 150 C
Gain Bandwidth Product FT:
110 MHz
Configuration:
Single
Collector- Base Voltage VCBO:
- 40 V
Series:
2DB11
Emitter- Base Voltage VEBO:
- 5 V
Collector-Emitter Saturation Voltage:
- 0.8 V
Manufacturer:
Diodes Incorporated
Introduction
The 2DB1182Q-13,from Diodes Incorporated,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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