MJD112T4G
manufacturer:
ONSEMI
Category:
Semiconductors
Specifications
Transistor Polarity:
NPN
Product Category:
Darlington Transistors
Mounting Style:
SMD/SMT
Maximum DC Collector Current:
2 A
Pd - Power Dissipation:
20 W
Collector- Emitter Voltage VCEO Max:
100 V
Package / Case:
TO-252-3 (DPAK)
Maximum Operating Temperature:
+ 150 C
Packaging:
Reel
Configuration:
Single
Collector- Base Voltage VCBO:
100 V
Series:
MJD112
Maximum Collector Cut-off Current:
20 UA
Emitter- Base Voltage VEBO:
5 V
Manufacturer:
Onsemi
Introduction
The MJD112T4G,from onsemi,is Darlington Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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