HN1A01FU-Y
manufacturer:
Toshiba
Category:
Semiconductors
Specifications
Transistor Polarity:
PNP
Product Category:
Bipolar Transistors - BJT
Mounting Style:
SMD/SMT
Maximum DC Collector Current:
- 150 MA
Collector- Emitter Voltage VCEO Max:
- 50 V
Package / Case:
US-6
Gain Bandwidth Product FT:
80 MHz
Collector- Base Voltage VCBO:
- 50 V
Series:
HN1A01
Emitter- Base Voltage VEBO:
- 5 V
Collector-Emitter Saturation Voltage:
- 0.1 V
Manufacturer:
Toshiba
Introduction
The HN1A01FU-Y,from Toshiba,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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