FID60-06D
manufacturer:
IXYS
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
200 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Continuous Collector Current At 25 C:
65 A
Pd - Power Dissipation:
200 W
Collector- Emitter Voltage VCEO Max:
600 V
Package / Case:
ISOPLUS I4-PAC-5
Maximum Operating Temperature:
+ 150 C
Maximum Gate Emitter Voltage:
+/- 20 V
Packaging:
Tube
Configuration:
Single
Collector-Emitter Saturation Voltage:
1.6 V
Manufacturer:
IXYS
Introduction
The FID60-06D,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
Send RFQ
Stock:
MOQ: