Send Message
Home > products > Semiconductors > IXGH60N60C3D1

IXGH60N60C3D1

manufacturer:
IXYS
Description:
IGBT Modules 60 Amps 600V
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
100 NA
Product Category:
IGBT Modules
Pd - Power Dissipation:
380 W
Collector-Emitter Saturation Voltage:
600 V
Package / Case:
TO-247-3
Maximum Operating Temperature:
+ 150 C
Packaging:
Tube
Continuous Collector Current At 25 C:
75 A
Product:
IGBT Silicon Modules
Manufacturer:
IXYS
Introduction
The IXGH60N60C3D1,from IXYS,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: