HGT1S10N120BNST
manufacturer:
Fairchild Semiconductor
Description:
IGBT Transistors N-Channel IGBT NPT Series 1200V
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
+/- 250 NA
Product Category:
IGBT Transistors
Mounting Style:
SMD/SMT
Continuous Collector Current At 25 C:
35 A
Pd - Power Dissipation:
298 W
Collector- Emitter Voltage VCEO Max:
1200 V
Package / Case:
TO-263AB-3
Maximum Operating Temperature:
+ 150 C
Maximum Gate Emitter Voltage:
+/- 20 V
Packaging:
Reel
Configuration:
Single
Collector-Emitter Saturation Voltage:
2.7 V
Manufacturer:
Fairchild Semiconductor
Introduction
The HGT1S10N120BNST,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
FGA20N120FTDTU |
IGBT Transistors 1200V N-Chan Trench
|
|
|
|
FGH60N60SMD |
IGBT Transistors 600V/60A Field Stop IGBT ver. 2
|
|
|
|
FGL40N120ANTU |
IGBT Transistors 1200V NPT IGBT
|
|
|
|
FGH60N60UFDTU |
|
|
|
|
FGH75T65UPD |
|
|
|
|
FGH40N60SMDF |
|
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