FPAB30BH60B
manufacturer:
Fairchild Semiconductor
Description:
IGBT Transistors SPM for Front-End Rectifier;Motion-SPM
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
250 UA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Collector- Emitter Voltage VCEO Max:
600 V
Pd - Power Dissipation:
104 W
Maximum Operating Temperature:
+ 125 C
Packaging:
Tube
Continuous Collector Current At 25 C:
30 A
Manufacturer:
Fairchild Semiconductor
Introduction
The FPAB30BH60B,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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FGA20N120FTDTU |
IGBT Transistors 1200V N-Chan Trench
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FGH60N60SMD |
IGBT Transistors 600V/60A Field Stop IGBT ver. 2
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FGL40N120ANTU |
IGBT Transistors 1200V NPT IGBT
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FGH60N60UFDTU |
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FGH75T65UPD |
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FGH40N60SMDF |
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