NGTB40N120FL2WG
manufacturer:
ONSEMI
Description:
IGBT Transistors 1200V/40A FAST IGBT FSII
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
200 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Continuous Collector Current At 25 C:
80 A
Pd - Power Dissipation:
535 W
Collector- Emitter Voltage VCEO Max:
1200 V
Package / Case:
TO-247
Maximum Operating Temperature:
+ 175 C
Maximum Gate Emitter Voltage:
30 V
Packaging:
Tube
Configuration:
Single
Collector-Emitter Saturation Voltage:
2 V
Manufacturer:
Onsemi
Introduction
The NGTB40N120FL2WG,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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