IXGH50N90B2D1
manufacturer:
IXYS
Description:
IGBT Transistors 50 Amps 900V 2.7 Rds
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
100 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Continuous Collector Current At 25 C:
75 A
Pd - Power Dissipation:
400 W
Collector- Emitter Voltage VCEO Max:
900 V
Package / Case:
TO-247-3
Maximum Operating Temperature:
+ 150 C
Maximum Gate Emitter Voltage:
+/- 20 V
Packaging:
Tube
Configuration:
Single
Collector-Emitter Saturation Voltage:
2.2 V
Manufacturer:
IXYS
Introduction
The IXGH50N90B2D1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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