IKW50N65ES5
manufacturer:
Infineon Technologies
Description:
IGBT Transistors Trenchstop 5 IGBT
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
100 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Pd - Power Dissipation:
274 W
Collector- Emitter Voltage VCEO Max:
650 V
Package / Case:
TO-247-3
Maximum Operating Temperature:
+ 175 C
Maximum Gate Emitter Voltage:
+/- 20
Collector-Emitter Saturation Voltage:
1.35 V
Manufacturer:
Infineon Technologies
Introduction
The IKW50N65ES5,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
IKW20N60T
IGBT Transistors LOW LOSS DuoPack 600V 20A
IKA15N60T
IGBT Transistors LOW LOSS DuoPack 600V 15A
IHW30N160R2
IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
AUIRG4PH50S
| Image | Part # | Description | |
|---|---|---|---|
|
|
IKW20N60T |
IGBT Transistors LOW LOSS DuoPack 600V 20A
|
|
|
|
IKA15N60T |
IGBT Transistors LOW LOSS DuoPack 600V 15A
|
|
|
|
IHW30N160R2 |
IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
|
|
|
|
AUIRG4PH50S |
|
Send RFQ
Stock:
MOQ: