IXBH42N170
manufacturer:
IXYS
Description:
IGBT Transistors 1700V 75A
Category:
Semiconductors
Specifications
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Pd - Power Dissipation:
360 W
Collector- Emitter Voltage VCEO Max:
1700 V
Package / Case:
TO-247-3
Maximum Operating Temperature:
+ 150 C
Maximum Gate Emitter Voltage:
20 V
Packaging:
Tube
Configuration:
Single
Manufacturer:
IXYS
Introduction
The IXBH42N170,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
Send RFQ
Stock:
MOQ: