FGA50N100BNTD2
manufacturer:
Fairchild Semiconductor
Description:
IGBT Transistors N-ch / 50A 1000V
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
500 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Continuous Collector Current At 25 C:
50 A
Pd - Power Dissipation:
156 W
Collector- Emitter Voltage VCEO Max:
1000 V
Package / Case:
TO-3PN
Maximum Operating Temperature:
+ 150 C
Maximum Gate Emitter Voltage:
25 V
Packaging:
Tube
Configuration:
Single
Collector-Emitter Saturation Voltage:
1.5 V
Manufacturer:
Fairchild Semiconductor
Introduction
The FGA50N100BNTD2,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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FGA20N120FTDTU |
IGBT Transistors 1200V N-Chan Trench
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FGH60N60SMD |
IGBT Transistors 600V/60A Field Stop IGBT ver. 2
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FGL40N120ANTU |
IGBT Transistors 1200V NPT IGBT
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FGH60N60UFDTU |
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FGH75T65UPD |
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FGH40N60SMDF |
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