NGB8207BNT4G
Specifications
Product Category:
IGBT Transistors
Mounting Style:
SMD/SMT
Pd - Power Dissipation:
165 W
Collector- Emitter Voltage VCEO Max:
365 V
Package / Case:
D2PAK
Maximum Operating Temperature:
+ 175 C
Packaging:
Reel
Maximum Gate Emitter Voltage:
15 V
Continuous Collector Current At 25 C:
20 A
Manufacturer:
Littelfuse
Introduction
The NGB8207BNT4G,from Littelfuse,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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