THGBMDG5D1LBAIT
manufacturer:
Toshiba
Description:
Flash Memory 4GB NAND EEPROM
Category:
Semiconductors
Specifications
Product Category:
Flash Memory
Mounting Style:
SMD/SMT
Package / Case:
FBGA-153
Supply Voltage - Max:
3.6 V
Memory Size:
4 GB
Packaging:
Tray
Supply Voltage - Min:
2.7 V
Memory Type:
NAND
Operating Temperature Range:
- 25 C To + 85 C
Manufacturer:
Toshiba
Introduction
The THGBMDG5D1LBAIT,from Toshiba,is Flash Memory.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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TC58NVG3S0FTA00 |
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THGBMFG7C1LBAIL |
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TC58NVG2S3ETA00 |
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THGBMDG5D1LBAIL |
Flash Memory 4GB NAND EEPROM
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TH58NVG4S0FTA20 |
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TH58NVG5S0FTAK0 |
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TC58NVG0S3ETA00 |
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THGBMHG6C1LBAWL |
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THGBMFG8C2LBAIL |
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TC58CVG1S3HRAIG |
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THGBMHG9C4LBAIR |
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TC58CVG2S0HRAIG |
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