TK12A60D
manufacturer:
Toshiba
Description:
MOSFET N-CH 600V 12A TO-220SIS
Category:
Semiconductors
Specifications
Product Category:
MOSFET
Vgs (Max):
±30V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
@ Qty:
0
FET Type:
N-Channel
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Manufacturer:
Toshiba
Minimum Quantity:
2500
Drive Voltage (Max Rds On, Min Rds On):
10V
Factory Stock:
0
Operating Temperature:
150°C (TJ)
FET Feature:
-
Series:
π-MOSVII
Input Capacitance (Ciss) (Max) @ Vds:
1800pF @ 25V
Supplier Device Package:
TO-220SIS
Part Status:
Active
Packaging:
Tube
Rds On (Max) @ Id, Vgs:
550 MOhm @ 6A, 10V
Power Dissipation (Max):
45W (Tc)
Package / Case:
TO-220-3 Full Pack
Technology:
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain To Source Voltage (Vdss):
600V
Introduction
The TK12A60D,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
TK20A60U
MOSFET N-CH 600V 20A TO-220SIS
SSM3J328R
MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS
TK4P60DB
MOSFET N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm
2SA1244-Y
Silicon PNP Power Transistors
TPH1400ANH,L1Q
MOSFET N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC
TPH4R50ANH
MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET
TK10A60D
MOSFET N-CH 600V 10A TO220SIS
2SK3878
Switching Regulator Applications
| Image | Part # | Description | |
|---|---|---|---|
|
|
TK20A60U |
MOSFET N-CH 600V 20A TO-220SIS
|
|
|
|
SSM3J328R |
MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS
|
|
|
|
TK4P60DB |
MOSFET N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm
|
|
|
|
2SA1244-Y |
Silicon PNP Power Transistors
|
|
|
|
TPH1400ANH,L1Q |
MOSFET N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC
|
|
|
|
TPH4R50ANH |
MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET
|
|
|
|
TK10A60D |
MOSFET N-CH 600V 10A TO220SIS
|
|
|
|
2SK3878 |
Switching Regulator Applications
|
Send RFQ
Stock:
MOQ: