STB35N65M5
Specifications
Transistor Polarity:
N-Channel
Technology:
Si
Product Category:
MOSFET
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Maximum Operating Temperature:
+ 150 C
Vds - Drain-Source Breakdown Voltage:
650 V
Packaging:
Reel
Vgs Th - Gate-Source Threshold Voltage:
4 V
Id - Continuous Drain Current:
27 A
Rds On - Drain-Source Resistance:
85 MOhms
Number Of Channels:
1 Channel
Vgs - Gate-Source Voltage:
25 V
Qg - Gate Charge:
83 NC
Manufacturer:
STMicroelectronics
Introduction
The STB35N65M5,from STMicroelectronics,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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