IRF100B201
Specifications
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
192 A
Mounting Style:
Through Hole
Tradename:
StrongIRFET
Minimum Operating Temperature:
- 55 C
Package / Case:
TO-220-3
Maximum Operating Temperature:
+ 175 C
Channel Mode:
Enhancement
Vds - Drain-Source Breakdown Voltage:
100 V
Packaging:
Tube
Vgs Th - Gate-Source Threshold Voltage:
2 V
Product Category:
MOSFET
Rds On - Drain-Source Resistance:
4.2 MOhms
Number Of Channels:
1 Channel
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
170 NC
Manufacturer:
IR / Infineon
Introduction
The IRF100B201,from IR / Infineon,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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