DMG1012T-7
Specifications
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
630 MA
Mounting Style:
SMD/SMT
Minimum Operating Temperature:
- 55 C
Package / Case:
SOT-523-3
Maximum Operating Temperature:
+ 150 C
Channel Mode:
Enhancement
Vds - Drain-Source Breakdown Voltage:
20 V
Packaging:
Reel
Vgs Th - Gate-Source Threshold Voltage:
500 MV
Product Category:
MOSFET
Rds On - Drain-Source Resistance:
300 MOhms
Number Of Channels:
1 Channel
Vgs - Gate-Source Voltage:
6 V
Qg - Gate Charge:
736.6 PC
Manufacturer:
Diodes Incorporated
Introduction
The DMG1012T-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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Image | Part # | Description | |
---|---|---|---|
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DMG2302UK-7 |
MOSFET MOSFET BVDSS: 8V-24V
|
|
![]() |
DMP2008UFG-7 |
MOSFET 20V P-CH MOSFET
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|
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2N7002DW-7-F |
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|
|
![]() |
BSS138DW-7-F |
MOSFET 50V 200mW
|
|
![]() |
BSS138W-7-F |
MOSFET 50V 200mW
|
|
![]() |
DMTH6005LK3Q-13 |
MOSFET MOSFET BVDSS: 41V-60V
|
|
![]() |
BSS84-7-F |
MOSFET -50V 250mW
|
|
![]() |
DMN61D9UW-7 |
MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
|
|
![]() |
DMP4051LK3-13 |
MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL
|
|
![]() |
ZXMS6004FFTA |
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|
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