NTTFS5116PLTAG
manufacturer:
ONSEMI
Description:
MOSFET P-CH 60V 5.7A 8WDFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 10 V
Rds On (Max) @ Id, Vgs:
52mOhm @ 6A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1258 PF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-WDFN (3.3x3.3)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta)
Power Dissipation (Max):
3.2W (Ta), 40W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTTFS5116
Introduction
P-Channel 60 V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount 8-WDFN (3.3x3.3)
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