SCT3030KLGC11
manufacturer:
Rohm Semiconductor
Description:
SICFET N-CH 1200V 72A TO247N
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.6V @ 13.3mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
131 NC @ 18 V
Rds On (Max) @ Id, Vgs:
39mOhm @ 27A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2222 PF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247N
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
72A (Tc)
Power Dissipation (Max):
339W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT3030
Introduction
N-Channel 1200 V 72A (Tc) 339W (Tc) Through Hole TO-247N
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| Image | Part # | Description | |
|---|---|---|---|
|
|
RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
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|
|
|
RRR040P03TL |
MOSFET P-CH 30V 4A TSMT3
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|
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|
RSR025P03TL |
MOSFET P-CH 30V 2.5A TSMT3
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|
RS1L120GNTB |
MOSFET N-CH 60V 12A/36A 8HSOP
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|
|
RUM003N02T2L |
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|
|
|
|
RD3P130SPTL1 |
MOSFET P-CH 100V 13A TO252
|
|
|
|
RD3H200SNTL1 |
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|
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|
RSR025N05TL |
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|
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|
RQ3E100ATTB |
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|
RV2C010UNT2L |
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|
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|
RSQ035P03TR |
MOSFET P-CH 30V 3.5A TSMT6
|
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|
R6042JNZ4C13 |
MOSFET N-CH 600V 42A TO247G
|
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|
RTR025N03TL |
MOSFET N-CH 30V 2.5A TSMT3
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|
RSR030N06TL |
MOSFET N-CH 60V 3A TSMT3
|
|
|
|
R6076ENZ4C13 |
MOSFET N-CH 600V 76A TO247
|
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RQ3L090GNTB |
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|
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