SCT3030ARC14
manufacturer:
Rohm Semiconductor
Description:
SICFET N-CH 650V 70A TO247-4L
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.6V @ 13.3mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-247-4
Gate Charge (Qg) (Max) @ Vgs:
104 NC @ 18 V
Rds On (Max) @ Id, Vgs:
39mOhm @ 27A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1526 PF @ 500 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4L
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Power Dissipation (Max):
262W
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT3030
Introduction
N-Channel 650 V 70A (Tc) 262W Through Hole TO-247-4L
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| Image | Part # | Description | |
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MOSFET N-CH 100V 5A CPT3
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|
RRR040P03TL |
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|
RD3P130SPTL1 |
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|
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|
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|
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|
RSQ035P03TR |
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R6042JNZ4C13 |
MOSFET N-CH 600V 42A TO247G
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|
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|
|
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