SI4431BDY-T1-E3
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 30V 5.7A 8SO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
20 NC @ 5 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
8-SOIC
Rds On (Max) @ Id, Vgs:
30mOhm @ 7.5A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.5W (Ta)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4431
Introduction
P-Channel 30 V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
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MOSFET N-CH 150V 53.7A PPAK SO-8
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SI7157DP-T1-GE3 |
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|
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SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
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SISA72DN-T1-GE3 |
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AUTOMOTIVE N-CHANNEL 100 V (D-S)
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|
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SI2319CDS-T1-GE3 |
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