IRFL9014TRPBF
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 60V 1.8A SOT223
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 10 V
Rds On (Max) @ Id, Vgs:
500mOhm @ 1.1A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
270 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1.8A (Tc)
Power Dissipation (Max):
2W (Ta), 3.1W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFL9014
Introduction
P-Channel 60 V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
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| Image | Part # | Description | |
|---|---|---|---|
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|
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|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
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|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
|
|
|
SQSA12CENW-T1_GE3 |
AUTOMOTIVE N-CHANNEL 100 V (D-S)
|
|
|
|
SI4058DY-T1-GE3 |
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|
|
|
|
SI2392ADS-T1-GE3 |
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|
|
|
|
IRFS9N60ATRLPBF |
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|
|
|
|
SQM120P06-07L_GE3 |
MOSFET P-CH 60V 120A TO263
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|
|
|
SQM100P10-19L_GE3 |
MOSFET P-CH 100V 93A TO263
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|
SI7439DP-T1-E3 |
MOSFET P-CH 150V 3A PPAK SO-8
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SQJ431AEP-T1_GE3 |
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SQJ459EP-T1_GE3 |
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SQJA68EP-T1_GE3 |
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SI2328DS-T1-GE3 |
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SI2329DS-T1-GE3 |
MOSFET P-CH 8V 6A SOT23-3
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SI2319CDS-T1-GE3 |
MOSFET P-CH 40V 4.4A SOT23-3
|
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