FDMS8050ET30
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 750µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
285 NC @ 10 V
Rds On (Max) @ Id, Vgs:
0.65mOhm @ 55A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
22610 PF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
55A (Ta), 423A (Tc)
Power Dissipation (Max):
3.3W (Ta), 180W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS8050
Introduction
N-Channel 30 V 55A (Ta), 423A (Tc) 3.3W (Ta), 180W (Tc) Surface Mount 8-PQFN (5x6)
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