FQD19N10TM
manufacturer:
ONSEMI
Description:
MOSFET N-CH 100V 15.6A DPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 10 V
Rds On (Max) @ Id, Vgs:
100mOhm @ 7.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±25V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
780 PF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
15.6A (Tc)
Power Dissipation (Max):
2.5W (Ta), 50W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQD19N10
Introduction
N-Channel 100 V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
Send RFQ
Stock:
MOQ: