IXFX320N17T2
manufacturer:
IXYS
Description:
MOSFET N-CH 170V 320A PLUS247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
640 NC @ 10 V
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 60A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
170 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
45000 PF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, TrenchT2™
Supplier Device Package:
PLUS247™-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
320A (Tc)
Power Dissipation (Max):
1670W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX320
Introduction
N-Channel 170 V 320A (Tc) 1670W (Tc) Through Hole PLUS247™-3
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| Image | Part # | Description | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
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|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
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|
|
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|
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|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
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|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
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|
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|
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|
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|
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|
|
|
|
IXFN44N100P |
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|
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|
IXTB30N100L |
MOSFET N-CH 1000V 30A PLUS264
|
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|
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