MSC080SMA120B
manufacturer:
Microchip Technology
Description:
SICFET N-CH 1200V 37A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
64 NC @ 20 V
Rds On (Max) @ Id, Vgs:
100mOhm @ 15A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+23V, -10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
838 PF @ 1000 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Mfr:
Microchip Technology
Current - Continuous Drain (Id) @ 25°C:
37A (Tc)
Power Dissipation (Max):
200W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
MSC080
Introduction
N-Channel 1200 V 37A (Tc) 200W (Tc) Through Hole TO-247-3
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