TK8S06K3L(T6L1,NQ)
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 60V 8A DPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
10 NC @ 10 V
Rds On (Max) @ Id, Vgs:
54mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
400 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSIV
Supplier Device Package:
DPAK+
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Power Dissipation (Max):
25W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK8S06
Introduction
N-Channel 60 V 8A (Ta) 25W (Tc) Surface Mount DPAK+
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