FQH8N100C
manufacturer:
ONSEMI
Description:
MOSFET N-CH 1000V 8A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
70 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.45Ohm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
3220 PF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-247-3
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
225W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQH8N100
Introduction
N-Channel 1000 V 8A (Tc) 225W (Tc) Through Hole TO-247-3
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