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IXFH6N100

manufacturer:
IXYS
Description:
MOSFET N-CH 1000V 6A TO247AD
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 2.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
130 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2Ohm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
1000 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
2600 PF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™
Supplier Device Package:
TO-247AD (IXFH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Power Dissipation (Max):
180W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH6
Introduction
N-Channel 1000 V 6A (Tc) 180W (Tc) Through Hole TO-247AD (IXFH)
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