Filters
Filters
Memory
| Image | Part # | Description | manufacturer | Stock | RFQ | |
|---|---|---|---|---|---|---|
|
MT40A1G16WBU-083E:B |
IC DRAM 16G PARALLEL 1.2GHZ
|
Micron Technology
|
|
|
|
|
|
MT40A1G8WE-075E:B |
IC DRAM 8G PARALLEL 1.33GHZ
|
Micron Technology
|
|
|
|
|
|
MT40A512M16JY-075E:B |
IC DRAM 8G PARALLEL 1.33GHZ
|
Micron Technology
|
|
|
|
|
|
MT25QU256ABA1EW7-0SIT |
IC FLASH 256M SPI 133MHZ 8WPDFN
|
Micron Technology
|
|
|
|
|
|
MT35XU512ABA1G12-0AAT |
SERIAL NOR SLC 64MX8 TBGA
|
Micron Technology
|
|
|
|
|
|
S29GL032N90FFIS42 |
Flash Memory Nor
|
Cypress Semiconductor
|
|
|
|
|
|
MTA36ASF4G72PZ-2G9E2 |
IC DRAM 288G PARALLEL 1467MHZ
|
Micron Technology
|
|
|
|
|
|
TC58NVG2S3ETA00 |
Flash Memory 4Gb 3.3V SLC NAND Flash Serial EEPROM
|
Toshiba
|
|
|
|
|
|
MTFC16GAPALBH-AAT |
IC FLASH 128G MMC
|
Micron Technology
|
|
|
|
|
|
THGBMDG5D1LBAIL |
Flash Memory 4GB NAND EEPROM
|
Toshiba
|
|
|
|
|
|
THGBMHG8C2LBAIL |
Flash Memory 32GB NAND EEPROM w/CQ
|
Toshiba
|
|
|
|
|
|
MT25QL512ABB8E12-1SIT |
IC FLASH 512M SPI 24TPBGA
|
Micron Technology
|
|
|
|
|
|
TC58NVG1S3ETAI0 |
Flash Memory 1Gb 3.3V SLC NAND Flash Serial EEPROM
|
Toshiba
|
|
|
|
|
|
MTFC32GAPALBH-AIT |
IC FLASH 256G MMC
|
Micron Technology
|
|
|
|
|
|
MTFC64GAJAECE-AAT |
IC FLASH 512G MMC
|
Micron Technology
|
|
|
|
|
|
MTFC64GAPALBH-AIT |
IC FLASH 512G MMC
|
Micron Technology
|
|
|
|
|
|
MT25QU02GCBB8E12-0SIT |
IC FLASH 2G SPI 133MHZ 24TPBGA
|
Micron Technology
|
|
|
|
|
|
IS25LQ040B-JNLE-TR |
Flash Memory 4Mb QSPI, 8-pin SOP 150Mil, RoHS, ET, T&R
|
ISSI
|
|
|
|
|
|
N25Q032A13ESE40F |
IC FLASH 32M SPI 108MHZ 8SOP2
|
Micron Technology
|
|
|
|
|
|
S34ML02G104TFI010 |
Flash Memory 2G 3V 25ns NAND Flash
|
Cypress Semiconductor
|
|
|
|
|
|
MT25TL01GBBB8ESF-0AAT |
IC FLASH 1G SPI 133MHZ 16SOP2
|
Micron Technology
|
|
|
|
|
|
S34ML01G100TFI000 |
Flash Memory 1Gb 3V 25ns NAND Flash
|
Spansion / Cypress
|
|
|
|
|
|
S34ML04G200TFI000 |
Flash Memory 4G, 3V, 25ns NAND Flash
|
Cypress Semiconductor
|
|
|
|
|
|
IS25LQ040B-JBLE-TR |
Flash Memory 4Mb QSPI, 8-pin SOP 208Mil, RoHS, ET, T&R
|
ISSI
|
|
|
|
|
|
S25FL164K0XMFI013 |
Flash Memory 64M, 3.0V, 108Mhz Serial NOR Flash
|
Cypress Semiconductor
|
|
|
|
|
|
IS25LQ512B-JNLE |
Flash Memory 512Kb QSPI, 8-pin SOP 150Mil, RoHS, ET
|
ISSI
|
|
|
|
|
|
IS25LQ040B-JNLE |
Flash Memory 4Mb QSPI, 8-pin SOP 150Mil, RoHS, ET
|
ISSI
|
|
|
|
|
|
W25Q32BVSSJG |
IC FLASH MEMORY 32MB
|
Winbond Electronics
|
|
|
|
|
|
MT25QL128ABB8E12-0AUT |
IC FLASH 128M SPI 24TPBGA
|
Micron Technology
|
|
|
|
|
|
S29PL032J70BFI120 |
Flash Memory 32Mb 3V 70ns Parallel NOR Flash
|
Cypress Semiconductor
|
|
|
|
|
|
S34ML01G100BHI000 |
Flash Memory 1Gb 3V 25ns NAND Flash
|
Cypress Semiconductor
|
|
|
|
|
|
K9F5608U0D-PCB0 |
32M x 8 Bit NAND Flash Memory
|
Samsung semiconductor
|
|
|
|
|
|
K4A8G085WB-BCPB |
8Gb B-die DDR4 SDRAM
|
Samsung semiconductor
|
|
|
|
|
|
K4A8G165WC-BCTD |
8Gb B-die DDR4 SDRAM x16
|
Samsung semiconductor
|
|
|
|
|
|
K4B4G0846Q-HYK0 |
DDP 4Gb B-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
|
|
|
|
|
K4T1G164QE-HCE7 |
1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant)
|
Samsung semiconductor
|
|
|
|
|
|
S25FL127SABBHIC00 |
Flash Memory 128MB 3V 108MHz Serial NOR Flash
|
Spansion / Cypress
|
|
|
|
|
|
K9GAG08U0E-SCB0 |
16Gb E-die NAND Flash
|
Samsung semiconductor
|
|
|
|
|
|
K4G20325FD-FC03 |
Graphic Memory
|
Samsung semiconductor
|
|
|
|
|
|
K4G41325FE-HC28 |
Graphic Memory
|
Samsung semiconductor
|
|
|
|
|
|
K4E6E304EE-EGCF |
Memory IC
|
Samsung semiconductor
|
|
|
|
|
|
S29WS512P0SBFW000 |
Flash Memory 512Mb 1.8V 80Mhz Parallel NOR Flash
|
Spansion / Cypress
|
|
|
|
|
|
S29WS256P0PBFW000 |
Flash Memory 256Mb 1.8V 66Mhz Parallel NOR Flash
|
Spansion / Cypress
|
|
|
|
|
|
S29GL032N90TFI030 |
Flash Memory 3V 32Mb Float Gate two address 90s
|
Cypress Semiconductor
|
|
|
|
|
|
S29GL064N90TFI010 |
Flash Memory 64Mb 3V 90ns Parallel NOR Flash
|
Cypress Semiconductor
|
|
|
|
|
|
IS42S16320B-6TL |
DRAM 512M (32Mx16) 166MHz SDR SDRAM, 3.3V
|
ISSI
|
|
|
|
|
|
MT25QL01GBBB8E12-0SIT |
IC FLASH 1G SPI 133MHZ 24TPBGA
|
Micron Technology
|
|
|
|
|
|
MT25QL128ABA1ESE-MSIT |
IC FLASH 128M SPI 133MHZ 8SOP2
|
Micron Technology
|
|
|
|
|
|
IS43TR16128AL-125KBL |
DRAM 2G 1.35V (128M x 16) DDR3 SDRAM
|
ISSI
|
|
|
|
|
|
K4B1G1646G-BCH9 |
1Gb D-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
|
|