FF150R12RT4
manufacturer:
Infineon Technologies
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
100 NA
Product Category:
IGBT Modules
Continuous Collector Current At 25 C:
150 A
Pd - Power Dissipation:
790 W
Collector- Emitter Voltage VCEO Max:
1200 V
Package / Case:
Module
Maximum Operating Temperature:
+ 150 C
Packaging:
Bulk
Configuration:
Dual
Collector-Emitter Saturation Voltage:
1.75 V
Product:
IGBT Silicon Modules
Manufacturer:
Infineon Technologies
Introduction
The FF150R12RT4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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