STGW40H120F2
manufacturer:
STMicroelectronics
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
250 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Continuous Collector Current At 25 C:
80 A
Pd - Power Dissipation:
468 W
Collector- Emitter Voltage VCEO Max:
1200 V
Package / Case:
TO-247-3
Maximum Operating Temperature:
+ 175 C
Maximum Gate Emitter Voltage:
20 V
Packaging:
Tube
Configuration:
Single
Collector-Emitter Saturation Voltage:
2.1 V
Manufacturer:
STMicroelectronics
Introduction
The STGW40H120F2,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
STGWA60H65DFB
IGBT Transistors IGBT & Power Bipolar
STGW45HF60WD
IGBT Transistors 45A 600V Ultra Fast IGBT
| Image | Part # | Description | |
|---|---|---|---|
|
|
STGWA60H65DFB |
IGBT Transistors IGBT & Power Bipolar
|
|
|
|
STGW45HF60WD |
IGBT Transistors 45A 600V Ultra Fast IGBT
|
Send RFQ
Stock:
MOQ: