STGW45HF60WD
Specifications
Gate-Emitter Leakage Current:
100 NA
Product Category:
IGBT Transistors
Mounting Style:
Through Hole
Pd - Power Dissipation:
250 W
Collector-Emitter Saturation Voltage:
1.9 V
Package / Case:
TO-247
Packaging:
Tube
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current At 25 C:
70 A
Manufacturer:
STMicroelectronics
Introduction
The STGW45HF60WD,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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