FP100R06KE3
manufacturer:
Infineon Technologies
Description:
IGBT Modules N-CH 600V 100A
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
100 NA
Product Category:
IGBT Modules
Continuous Collector Current At 25 C:
100 A
Pd - Power Dissipation:
335 W
Collector- Emitter Voltage VCEO Max:
600 V
Package / Case:
Econo 3
Maximum Operating Temperature:
+ 150 C
Configuration:
Array 7
Collector-Emitter Saturation Voltage:
1.9 V
Product:
IGBT Silicon Modules
Manufacturer:
Infineon Technologies
Introduction
The FP100R06KE3,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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