F3L150R07W2E3_B11
manufacturer:
Infineon Technologies
Description:
IGBT Modules IGBT MODULES 650V 150A
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current:
400 NA
Product Category:
IGBT Modules
Continuous Collector Current At 25 C:
150 A
Pd - Power Dissipation:
335 W
Collector- Emitter Voltage VCEO Max:
650 V
Package / Case:
Module
Maximum Operating Temperature:
+ 150 C
Configuration:
IGBT-Inverter
Collector-Emitter Saturation Voltage:
1.45 V
Product:
IGBT Silicon Modules
Manufacturer:
Infineon Technologies
Introduction
The F3L150R07W2E3_B11,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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