TC58BVG2S0HTAI0
manufacturer:
Toshiba
Description:
EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM
Category:
Semiconductors
Specifications
Supply Current - Max:
30 MA
Product Category:
EEPROM
Mounting Style:
SMD/SMT
Minimum Operating Temperature:
- 40 C
Organization:
512 M X 8
Package / Case:
TSOP-48
Maximum Operating Temperature:
+ 85 C
Memory Size:
4 Gbit
Packaging:
Tray
Series:
TC58BVG2S0
Operating Supply Voltage:
3.3 V
Interface Type:
Parallel
Maximum Clock Frequency:
-
Manufacturer:
Toshiba
Introduction
The TC58BVG2S0HTAI0,from Toshiba,is EEPROM.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
TC58NVG0S3HTAI0 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
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|
|
|
TC58NYG0S3HBAI6 |
EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
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|
|
|
TC58BVG0S3HTA00 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
|
|
|
|
TC58BVG2S0HTA00 |
EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM
|
|
|
|
TC58NVG1S3HTAI0 |
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
|
|
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|
TC58BVG1S3HTAI0 |
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
|
|
|
|
TC58NVG1S3HBAI4 |
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
|
|
|
|
TC58NVG2S0HBAI4 |
EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM
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|
TC58BVG0S3HTAI0 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
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TC58NVG1S3HTA00 |
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
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TC58BVG1S3HTA00 |
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
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TC58NVG0S3HTA00 |
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