TC58NYG0S3HBAI6
manufacturer:
Toshiba
Description:
EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
Category:
Semiconductors
Specifications
Supply Current - Max:
30 MA
Product Category:
EEPROM
Mounting Style:
SMD/SMT
Organization:
128 M X 8
Package / Case:
VFBGA-67
Memory Size:
1 Gbit
Packaging:
Tray
Series:
TC58NYG0S3
Interface Type:
Parallel
Maximum Clock Frequency:
-
Manufacturer:
Toshiba
Introduction
The TC58NYG0S3HBAI6,from Toshiba,is EEPROM.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
TC58NVG0S3HTAI0 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
|
|
|
|
TC58BVG0S3HTA00 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
|
|
|
|
TC58BVG2S0HTA00 |
EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM
|
|
|
|
TC58NVG1S3HTAI0 |
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
|
|
|
|
TC58BVG1S3HTAI0 |
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
|
|
|
|
TC58NVG1S3HBAI4 |
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
|
|
|
|
TC58NVG2S0HBAI4 |
EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM
|
|
|
|
TC58BVG0S3HTAI0 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
|
|
|
|
TC58NVG1S3HTA00 |
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
|
|
|
|
TC58BVG1S3HTA00 |
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
|
|
|
|
TC58NVG0S3HTA00 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
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TC58BVG2S0HTAI0 |
EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM
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