QPD1000
manufacturer:
Qorvo
Description:
RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
Category:
Semiconductors
Specifications
Transistor Polarity:
N-Channel
Technology:
GaN SiC
Product Category:
RF JFET Transistors
Mounting Style:
SMD/SMT
Gain:
19 DB
Transistor Type:
HEMT
Output Power:
24 W
Package / Case:
QFN-8
Maximum Operating Temperature:
+ 85 C
Vds - Drain-Source Breakdown Voltage:
28 V
Packaging:
Tray
Id - Continuous Drain Current:
817 MA
Vgs - Gate-Source Breakdown Voltage:
100 V
Pd - Power Dissipation:
28.8 W
Manufacturer:
Qorvo
Introduction
The QPD1000,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
T2G6000528-Q3 |
RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
|
|
|
|
TGF2978-SM |
RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
|
|
|
|
T2G6001528-SG |
RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
|
|
|
|
QPD3601 |
RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN
|
|
|
|
QPD1015L |
RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
|
|
|
|
TGF3015-SM |
RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
|
|
|
|
TGF2953 |
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|
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