TGF3015-SM
manufacturer:
Qorvo
Description:
RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
Category:
Semiconductors
Specifications
Transistor Polarity:
N-Channel
Technology:
GaN SiC
Product Category:
RF JFET Transistors
Mounting Style:
SMD/SMT
Gain:
17.1 DB
Transistor Type:
HEMT
Pd - Power Dissipation:
15.3 W
Package / Case:
QFN-EP-16
Output Power:
11 W
Vds - Drain-Source Breakdown Voltage:
32 V
Packaging:
Tray
Id - Continuous Drain Current:
557 MA
Vgs - Gate-Source Breakdown Voltage:
- 2.7 V
Manufacturer:
Qorvo
Introduction
The TGF3015-SM,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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