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Home > products > Semiconductors > ZXMN7A11GTA

ZXMN7A11GTA

manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 70V 3.8A SOT-223
Category:
Semiconductors
Specifications
Product Category:
MOSFET
Vgs (Max):
±20V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
@ Qty:
0
FET Type:
N-Channel
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
7.4nC @ 10V
Manufacturer:
Diodes Incorporated
Minimum Quantity:
1000
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Factory Stock:
0
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Feature:
-
Series:
-
Input Capacitance (Ciss) (Max) @ Vds:
298pF @ 40V
Supplier Device Package:
SOT-223
Part Status:
Active
Packaging:
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:
130 MOhm @ 4.4A, 10V
Power Dissipation (Max):
2W (Ta)
Package / Case:
TO-261-4, TO-261AA
Technology:
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain To Source Voltage (Vdss):
70V
Introduction
The ZXMN7A11GTA,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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