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Home > products > Semiconductors > BSS123WQ-7-F

BSS123WQ-7-F

manufacturer:
Diodes Incorporated
Description:
MOSFET 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA
Category:
Semiconductors
Specifications
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
170 MA
Mounting Style:
SMD/SMT
Minimum Operating Temperature:
- 55 C
Package / Case:
SOT-323-3
Maximum Operating Temperature:
+ 150 C
Channel Mode:
Enhancement
Vds - Drain-Source Breakdown Voltage:
100 V
Packaging:
Reel
Vgs Th - Gate-Source Threshold Voltage:
800 MV
Product Category:
MOSFET
Number Of Channels:
1 Channel
Vgs - Gate-Source Voltage:
20 V
Rds On - Drain-Source Resistance:
10 Ohms
Manufacturer:
Diodes Incorporated
Introduction
The BSS123WQ-7-F,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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