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Home > products > Semiconductors > DMN10H220L-7

DMN10H220L-7

manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 100V 1.6A SOT-23
Category:
Semiconductors
Specifications
Product Category:
MOSFET
Vgs (Max):
±16V
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta)
@ Qty:
0
FET Type:
N-Channel
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
8.3nC @ 10V
Manufacturer:
Diodes Incorporated
Minimum Quantity:
3000
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Factory Stock:
0
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Feature:
-
Series:
-
Input Capacitance (Ciss) (Max) @ Vds:
401pF @ 25V
Supplier Device Package:
SOT-23
Part Status:
Active
Packaging:
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:
220 MOhm @ 1.6A, 10V
Power Dissipation (Max):
1.3W (Ta)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Technology:
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain To Source Voltage (Vdss):
100V
Introduction
The DMN10H220L-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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