STH315N10F7-2
manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 100V 180A H2PAK-2
Category:
Semiconductors
Specifications
Product Category:
MOSFET
Vgs (Max):
±20V
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
@ Qty:
0
FET Type:
N-Channel
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
180nC @ 10V
Manufacturer:
STMicroelectronics
Minimum Quantity:
1000
Drive Voltage (Max Rds On, Min Rds On):
10V
Factory Stock:
0
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Feature:
-
Series:
Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Input Capacitance (Ciss) (Max) @ Vds:
12800pF @ 25V
Supplier Device Package:
H2PAK-2
Part Status:
Active
Packaging:
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:
2.3 MOhm @ 60A, 10V
Power Dissipation (Max):
315W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology:
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Drain To Source Voltage (Vdss):
100V
Introduction
The STH315N10F7-2,from STMicroelectronics,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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