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Home > products > Semiconductors > DMG1012UW-7

DMG1012UW-7

manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 20V 1A SOT323
Category:
Semiconductors
Specifications
Product Category:
MOSFET
Vgs (Max):
±6V
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
@ Qty:
0
FET Type:
N-Channel
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
0.74nC @ 4.5V
Manufacturer:
Diodes Incorporated
Minimum Quantity:
3000
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Factory Stock:
0
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Feature:
-
Series:
-
Input Capacitance (Ciss) (Max) @ Vds:
60.67pF @ 16V
Supplier Device Package:
SOT-323
Part Status:
Active
Packaging:
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:
450 MOhm @ 600mA, 4.5V
Power Dissipation (Max):
290mW (Ta)
Package / Case:
SC-70, SOT-323
Technology:
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain To Source Voltage (Vdss):
20V
Introduction
The DMG1012UW-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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